Epitaxial (growth) Mixed Gas

In the semiconductor industry, the gas used to grow one or more layers of material by chemical vapor deposition on a carefully selected substrate is called epitaxial gas.

Commonly used silicon epitaxial gases include dichlorosilane, silicon tetrachloride and silane. Mainly used for epitaxial silicon deposition, silicon oxide film deposition, silicon nitride film deposition, amorphous silicon film deposition for solar cells and other photoreceptors, etc. Epitaxy is a process in which a single crystal material is deposited and grown on the surface of a substrate.

Chemical Vapor Deposition (CVD) Mixed Gas

CVD is a method of depositing certain elements and compounds by gas phase chemical reactions using volatile compounds, i.e., a film forming method using gas phase chemical reactions. Depending on the type of film formed, the chemical vapor deposition (CVD) gas used is also different.

Doping Mixed Gas

In the manufacture of semiconductor devices and integrated circuits, certain impurities are doped into semiconductor materials to give the materials the required conductivity type and a certain resistivity to manufacture resistors, PN junctions, buried layers, etc. The gas used in the doping process is called doping gas.

Mainly includes arsine, phosphine, phosphorus trifluoride, phosphorus pentafluoride, arsenic trifluoride, arsenic pentafluoride, boron trifluoride, diborane, etc.

Usually, the doping source is mixed with a carrier gas (such as argon and nitrogen) in a source cabinet. After mixing, the gas flow is continuously injected into the diffusion furnace and surrounds the wafer, depositing dopants on the surface of the wafer, and then reacting with silicon to generate doped metals that migrate into silicon.

Etching Gas Mixture

Etching is to etch away the processing surface (such as metal film, silicon oxide film, etc.) on the substrate without photoresist masking, while preserving the area with photoresist masking, so as to obtain the required imaging pattern on the substrate surface.

Etching methods include wet chemical etching and dry chemical etching. The gas used in dry chemical etching is called etching gas.

Etching gas is usually fluoride gas (halide), such as carbon tetrafluoride, nitrogen trifluoride, trifluoromethane, hexafluoroethane, perfluoropropane, etc.